Description
FEATURES
1TB Storage Capacity
990 EVO
M.2 2280 Form Factor
NVMe 2.0 PCI-Express 4.0 x4 / 5.0 x2 Interface
Up to 5,000MB/s Sequential Read Speed
Up to 4,200MB/s Sequential Write Speed
4KB QD32 Random Read: Up to 680,000 IOPS
4KB QD32 Random Write: Up to 800,000 IOPS
4KB QD1 Random Read: Up to 20,000 IOPS
4KB QD1 Random Write: Up to 90,000 IOPS
Up to 1.5 Million Hours Reliability (MTBF)
AES 256-Bit Encryption
Samsung V-NAND TLC Flash
SMART & TRIM Support
Auto Garbage Collection Algorithm
TECHNICAL SPECIFICATIONS
Brand: Samsung
Series: 990 EVO
Model: MZ-V9E1T0BW
Storage
Drive Capacity: 1TB
Cache Memory: HMB(Host Memory Buffer)
Storage Memory: Samsung V-NAND TLC
Controller: Samsung In-house Controller
Performance
Interface: PCIe 4.0 x4 / PCIe 5.0 x2
NVMe 2.0
Random Read Speed (4KB, QD32): Up to 680,000 IOPS
Random Write Speed (4KB, QD32): Up to 800,000 IOPS
Random Read Speed (4KB, QD1): Up to 20,000 IOPS
Random Write Speed (4KB, QD1): Up to 90,000 IOPS
Sequential Read Speed: 5000 MB/s
Sequential Write Speed: 4200 MB/s
Physical
Drive Type: SSD
Form Factor: M.2 2280
SSD Specs
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit Encryption (Class 0)
TCG/Opal IEEE1667 (Encrypted drive)
Device Sleep Mode Support: Yes
SMART Support: Yes
TRIM Support: Yes
Reliability
Endurance (Total Bytes Written): 600 TB
Mean Time Between Failures (MTBF): 1.5 Million Hours
Electrical
Power Draw: Read: 4.9 W
Write: 4.5 W
Idle: 60 mW
Sleep: 5 mW
Allowable Voltage: 3.3 V ± 5 % Allowable Voltage
Environmental
Operating Shock: 1,500 G & 0.5 ms (Half sine)
Operating Temperature: 0 to 70°C
General
Features: Evolved Power Efficiency
Exceptional Endurance
Unparalleled Reliability
Dynamic Thermal Guard
Samsung Magician Support
AES 256-Bit Encryption
Samsung V-NAND TLC Flash
SMART & TRIM Support
Auto Garbage Collection Algorithm
Dimensions (W x H x D): 80.2 x 22 x 2.38 mm
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