Samsung 990 EVO Plus 1TB PCIe 5.0 x2 NVMe M.2 2280 Solid State Drive

Description

FEATURES
1TB Storage Capacity
990 EVO Plus
M.2 2280 Form Factor
NVMe 2.0 PCI-Express 4.0 x4 / 5.0 x2 Interface
Up to 7,150MB/s Sequential Read Speed
Up to 6,300MB/s Sequential Write Speed
Up to 1.5 Million Hours Reliability (MTBF)
AES 256-Bit Encryption
Samsung V-NAND TLC Flash
SMART & TRIM Support
Auto Garbage Collection Algorithm

TECHNICAL SPECIFICATIONS

Brand: Samsung
Series: Solid State Disks
Model: MZ-V9S1T0BW
Interface: PCIe 4.0 x4 / 5.0 x2 NVMe 2.0
Capacity: 1TB
Controller: Samsung in-house Controller
NAND Flash Memory: Samsung V-NAND TLC
Cache Memory: HMB (Host Memory Buffer)
Dimension: Max 80.15 x Max 22.15 x Max 2.38 (mm)
Form Factor: M.2 (2280)
Sequential Read: 7,150MB/s
Sequential Write: 6,300MB/s
Random Read: 850K IOPS
Random Write: 1,350K IOPS

Power Consumption
Read (Active): 4.3W
Write (Active): 4.2W
Idle PS3: 60mW
Idle PS4: 5 mW
Operating Temp.: 0°C to 70°C (Measured by S.M.A.R.T. Temperature; Proper airflow recommended)
Non-Operating Temp.: -40°C to 85°C
Humidity: 5% to 95% non-condensing
Shock (Non-Operating): 1,500G(Gravity), duration: 0.5ms, 3 axis
Vibration (Non-Operating): 20~2,000Hz, 20G
MTBF: 1.5 million hours